MMBT2907AQ-7-F Datasheet

MMBT2907A-7-F

Datasheet specifications

Datasheet's name MMBT2907A-7-F
File size 83.757 KB
File type pdf
Number of pages 7

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Diodes Incorporated MMBT2907AQ-7-F
  • Transistor Type: PNP
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 310mW
  • Transition Frequency (fT): 200MHz
  • DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.6V@500mA,50mA
  • Package: SOT-23
  • Manufacturer: Diodes Incorporated